TM DSG SiNT MOSFET with a inner gate and outer gate are shown with
By A Mystery Man Writer
Sketch of possible architectures for tunnel FETs based on 2D
Effect of 3 nm gate length scaling in junctionless double
Effect of 3 nm gate length scaling in junctionless double
Photo-generation Rate generated in the model.
Modelled and experimental Hall voltage response in vertical Hall
TM DSG SiNT MOSFET with a inner gate and outer gate are shown with
ION/IOFF ratio comparison of this work with reports in literature
ID versus VDS curves of TM DSG SiNT MOSFET with
Schematic of the real-space representation of an electron device
IG vs VGS curves with Ta and W as metal gates for In0.53Ga0.47As
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